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The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and.
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Maestro-Izquierdo et al.

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For this purpose, a smart software tool has been implemented to control the instrumentation and to perform a dedicated ultra-fast pulsed characterization. Different time scales, from tens of milliseconds to hundreds of nanoseconds, have been explored to emulate the STDP learning rule in electronic synapses. The impact of such times on the synaptic weight potentiation and depression characteristics has also been discussed.

Modular microfluidic systems based on a new magnetic clamping approach, which enables both interconnection of microfluidic modules and reversible integration of solid-state sensors, is presented in this work.

The system layout allows the easy assessment of the system fluidic performance by using optically transparent and low cost polymeric materials. The3D impedimetric sensors as a tool for monitoring bacterial response to antibiotics S.

Brosel-Oliu et al. Chip, , vol. The developed microbial sensor based on interdigitated electrode array 3D-IDEA impedimetric transducer was employed in a biosensing platform especially designed to monitor the bacterial response to the antibiotic ampicillin. High-resolution mapping of infraslow cortical brain activity enabled by graphene microtransistors Eduard Masvidal-Codina et al. New Releases. Description The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices.

Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications.

It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology.

Dielectric Films for Advanced Microelectronics : Mikhail R. Baklanov :

A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films. Other books in this series. Luminescent Materials and Applications Adrian Kitai. Add to basket. Back cover copy The dielectric properties of silicon dioxide SiO2 , such as high resistivity and excellent dielectric strength, have aided the evolution of microelectronics during the past 40 years.

Dielectric Films for Advanced Microelectronics

Silica films have been successfully used over this period for both gate and interconnect applications in ultra large-scale integration ULSI devices. Dielectric films for gate applications need to have a higher dielectric constant, while interconnect dielectric materials need to have a lower dielectric constant, compared with SiO2. In order to maintain the high drive current and gate capacitance required of scaled MOSFETs metal-oxide-silicon field effect transistors , SiO2 gate dielectrics have decreased in thickness to less than 2 nm today, with a continued effort to shrink to the thickness below 1 nm.

However, SiO2 layers thinner than 1. Therefore, alternative gate dielectric materials are required.

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SiO2, having been the universal dielectric material for both gate and interlayer dielectric ILD applications for many years, must be replaced by materials with a higher dielectric constant for the gate applications and a reduced dielectric constant for interconnect applications. Replacements for silicon dioxide, such as HfO2, ZrO2, and Al2O3, for introduction as high-k dielectrics described in the central section of the book , have material properties that are quite different compared with those of traditional dense SiO2 and these differences create many technological challenges that are the subject of intensive research.

In addition, not only the development of new gate materials but also re-engineering of many technological processes is needed. For example, in the case of low-k materials discussed in the first section of the book , active species formed during different technological processes diffuse into the pores and create severe damage. All these problems have been stimulating the development of new technological approaches, which will be dealt with in this book.

This book presents an in-depth overview of novel developments made by scientific leaders in the microelectronics community. It covers a broad range of related topics, from physical principles to design, fabrication, characterization, and application of novel dielectric films. This book is intended for postgraduate level students, PhD students and industrial researchers, to enable them to gain insight into this important area of research.

Table of contents Series Preface.

Spin-On Dielectric Materials. Porosity of Low Dielectric Constant Materials. High-resolution materials for displays and organic electronics will be described. As a final example, metal oxide nanoparticle photoresists will be described. Targeted for EUV patterning, these new metal oxide nanoparticles can be patterned using a range of wavelengths and enable the production of arbitrary patterns at very small length scales.

Low Dielectric Constant Materials for IC Applications Springer Series in Advanced Microelectronics

The patterning mechanism seems to function with any metal oxide, using a new, previously undiscovered patterning process that depends upon the selection of ligand, photoactive compound and bake cycle. Both negative tone and positive tone images are possible.

These and other advances in lithography will be described. Download will be available 15 business days after the event. Also includes a one-year IMAPS individual membership or membership renewal at no additional charge which does not apply to corporate or affiliate memberships. All prices below are subject to change. Hotel Reservations. There is not a "host hotel" where conference activities will be held, as all events will be held at the Winterthur Museum.

There is not a reserved hotel room block as a result. During the past few meetings, the Symposium on Polymers has welcomed participants from year to year. We expect the same level of participation, if not more, this year! To give you an idea of the types of participants you can expect at this symposium, here is a listing of the Participating Companies:. Meetings are held biannually with a strong emphasis on new polymer development and processing. We look forward to seeing you in April at the beautiful Winterthur Gardens! SOP Steering Committee:. Edward R. Michael Toepper Business Development Fraunhofer.

Advisory Board:. Michael Gallagher DOW. Bob Hubbard Lambda Technologies, Inc. Mark Poliks Binghamton University. Bill Weber Educator. Jeff is an expert in thermosetting polymers used in electronic packaging. Wagnon, Jr. Technical Achievement Award for his sustained technical contributions in the area of polymers used in electronic packaging. He received a M. Frank Windrich is a member of MRS and authored and co-authored around 10 publications. Coffee Break Sponsored by:.